Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

60A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

390W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-40°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2008

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

33MOhm

Voltage - Rated DC  

250V

Current Rating  

60A

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

390W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

33m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5860pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

150nC @ 10V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

60A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

250V

Dual Supply Voltage  

250V

Recovery Time  

290 ns

Max Junction Temperature (Tj)  

175°C

Nominal Vgs  

5 V

Height  

19.8mm

Length  

10.66mm

Width  

4.82mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free